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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004D2/D MJE18004D2 Designer'sTM Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: * Low Base Drive Requirement * High Peak DC Current Gain (55 Typical) @ IC = 100 mA * Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread * Integrated Collector-Emitter Free Wheeling Diode * Fully Characterized and Guaranteed Dynamic VCE(sat) * "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads It's characteristics make it also suitable for PFC application. POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCBO VCES Value 450 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage 1000 1000 12 Collector-Emitter Breakdown Voltage Emitter-Base Voltage VEBO IC ICM IB IBM PD Collector Current -- Continuous Collector Current -- Peak (1) Base Current -- Continuous Base Current -- Peak (1) 5 10 2 4 *Total Device Dissipation @ TC = 25_C *Derate above 25C Operating and Storage Temperature 75 0.6 Watt W/_C TJ, Tstg - 65 to 150 CASE 221A-06 TO-220AB _C THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient RJC RJA TL 1.65 62.5 260 _C/W _C Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Designer's and SWITCHMODE are trademarks of Motorola, Inc. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIII I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIII I I I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIII I I I I II I I I IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I MJE18004D2 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) DYNAMIC SATURATION VOLTAGE ON CHARACTERISTICS OFF CHARACTERISTICS Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Collector Cutoff Current (VCE = 500 V, VEB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) DC Current Gain (IC = 0.8 Adc, VCE = 1 Vdc) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) Base-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) Emitter-Cutoff Current (VEB = 10 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 1 Adc, VCE = 2.5 Vdc) (IC = 2 Adc, VCE = 1 Vdc) (IC = 1 Adc, IB = 0.2 Adc) (IC = 0.8 Adc, IB = 40 mAdc) (IC = 2 Adc, IB = 0.4 Adc) (IC = 2 Adc, IB = 0.4 Adc) IC = 1 Adc IB1 = 100 mA VCC = 300 V Characteristic IC = 2 Adc IB1 = 0.4 A VCC = 300 V @ 3 s @ 1 s @ 3 s @ 1 s @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VCEO(sus) VCE(dsat) VCE(sat) VBE(sat) Symbol VCBO VEBO ICEO IEBO ICES hFE 1000 Min 450 15 10 12 18 14 6 4 1100 0.38 0.55 0.25 0.28 0.45 0.75 Typ 547 1.4 8 3.1 9 0.8 0.7 0.9 1.6 0.9 0.8 9 16 28 14 14 11 18 28 20 8 6 0.5 0.75 Max 0.75 1 100 100 500 100 100 1 0.9 0.5 0.6 1.5 1 0.9 Adc Adc Adc Unit Vdc Vdc Vdc Vdc Vdc -- V 2 Motorola Bipolar Power Transistor Device Data IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIII I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIII I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V) SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) DYNAMIC CHARACTERISTICS DIODE CHARACTERISTICS Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Input Capacitance (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Forward Recovery Time (IF = 0.4 Adc, di/dt = 10 A/s) Forward Diode Voltage (IEC = 1 Adc) (IF = 2 Adc, di/dt = 10 A/s) (IF = 1 Adc, di/dt = 10 A/s) (IEC = 2 Adc) IC = 2.5 Adc, IB1 = 0.5 Adc IB2 = 0.5 Adc VCC = 300 Vdc IC = 2.5 Adc, IB1 = 0.5 Adc IB2 = 1 Adc VCC = 250 Vdc IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 300 Vdc Characteristic IC = 2.5 Adc IB1 = 500 mAdc IB2 = 500 mAdc VZ = 350 V LC = 300 H IC = 1 Adc IB1 = 100 mAdc IB2 = 500 mAdc VZ = 300 V LC = 200 H IC = 2 Adc IB1 = 400 mAdc IB2 = 400 mAdc VZ = 300 V LC = 200 H @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C Symbol VEC Cob Cib ton ton ton toff toff toff fT tfr tc ts tc ts tc ts tf tf tf 1.85 Min 2.1 1.1 0.7 1.05 2.12 2.6 1.15 1.6 1.15 0.8 0.96 0.72 Typ 75 160 70 100 95 230 300 700 355 750 130 300 120 500 100 150 500 450 335 335 440 2.9 2.6 60 13 Motorola Bipolar Power Transistor Device Data 2.15 Max 120 450 150 500 175 150 150 750 750 100 0.9 2.4 2.4 1.3 1.4 1.7 1.5 90 V MJE18004D2 MHz Unit pF pF s s s s s s ns ns ns ns ns ns ns ns ns ns 3 MJE18004D2 TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V hFE , DC CURRENT GAIN TJ = - 20C hFE , DC CURRENT GAIN TJ = 25C 100 TJ = 125C VCE = 5 V TJ = 25C TJ = - 20C 10 10 TJ = 125C 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volt 3 TJ = 25C VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 IC/IB = 5 TJ = 125C 5A 2 4A 3A 2A 1 1A 1 TJ = 25C TJ = - 20C IC = 500 mA 0 0.01 0.1 0.001 0.1 1 IB, BASE CURRENT (mA) 10 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 10 IC/IB = 10 VCE , VOLTAGE (VOLTS) TJ = 125C VCE , VOLTAGE (VOLTS) 10 IC/IB = 20 TJ = 125C TJ = - 20C 1 TJ = 25C 1 TJ = 25C 0.1 0.001 TJ = - 20C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector-Emitter Saturation Voltage Figure 6. Collector-Emitter Saturation Voltage 4 Motorola Bipolar Power Transistor Device Data MJE18004D2 TYPICAL STATIC CHARACTERISTICS 10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 10 IC/IB = 10 1 TJ = - 20C TJ = 125C TJ = 25C 1 TJ = - 20C TJ = 125C TJ = 25C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Base-Emitter Saturation Region Figure 8. Base-Emitter Saturation Region 10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 20 VBE , VOLTAGE (VOLTS) 10 25C 1 1 TJ = - 20C TJ = 125C TJ = 25C 125C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.01 1 0.1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) 10 Figure 9. Base-Emitter Saturation Region Figure 10. Forward Diode Voltage Cib (pF) COLLECTOR EMITTER VOLTAGE (VOLTS) 1000 TJ = 25C f(test) = 1 MHz 1200 TC = 25C BVCER @ ICER = 10 mA 1000 C, CAPACITANCE (pF) 100 Cob 800 BVCER(sus) @ ICER = 200 mA, Lc = 25 mH 600 10 100 BASE-EMITTER RESISTOR () 1000 10 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 11. Capacitance Figure 12. BVCER = f(RBE) Motorola Bipolar Power Transistor Device Data 5 MJE18004D2 TYPICAL SWITCHING CHARACTERISTICS 3200 TJ = 125C TJ = 25C 2400 t, TIME (ns) IC/IB = 10 t, TIME ( s) 3 IBon = IBoff VCC = 300 V PW = 20 s 5 IC/IB = 10 4 IBon = IBoff VCC = 300 V PW = 20 s 1600 2 800 IC/IB = 5 0 1 3 2 IC, COLLECTOR CURRENT (AMPS) 4 1 0 1 TJ = 125C TJ = 25C IC/IB = 5 4 3 2 IC, COLLECTOR CURRENT (AMPS) Figure 13. Resistive Switch Time, ton Figure 14. Resistive Switch Time, toff 4 IC/IB = 5 3 t, TIME ( s) t, TIME ( s) 4 IC/IB = 10 3 2 2 1 TJ = 125C TJ = 25C 0 0 1 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 4 1 TJ = 125C TJ = 25C 0 0 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 4 3 2 IC, COLLECTOR CURRENT (AMPS) 1 3 2 IC, COLLECTOR CURRENT (AMPS) Figure 15. Inductive Storage Time, tsi @ IC/IB = 5 Figure 16. Inductive Storage Time, tsi @ IC/IB = 10 1000 TJ = 125C TJ = 25C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IC/IB = 5 1000 TJ = 125C TJ = 25C IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 H IC/IB = 10 800 800 tc t, TIME (ns) 400 tfi t, TIME (ns) 600 600 400 200 0 0 2 3 IC, COLLECTOR CURRENT (AMPS) 1 200 0 4 0 2 1 3 IC, COLLECTOR CURRENT (AMPS) 4 Figure 17. Inductive Switching Time, tc & tfi @ IC/IB = 5 Figure 18. Inductive Switching Time, tfi @ IC/IB = 10 6 Motorola Bipolar Power Transistor Device Data MJE18004D2 TYPICAL SWITCHING CHARACTERISTICS 1600 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 H IC/IB = 10 t si , STORAGE TIME (s) 5 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IC = 2 A IC = 1 A TJ = 125C TJ = 25C 1200 t, TIME (ns) 4 800 3 400 TJ = 125C TJ = 25C 0 0 2 3 IC, COLLECTOR CURRENT (AMPS) 1 4 2 0 5 10 hFE, FORCED GAIN 15 20 Figure 19. Inductive Switching, tc @ IC/IB = 10 Figure 20. Inductive Storage Time 1000 IBoff = IBon VCC = 15 V 800 VZ = 300 V LC = 200 H 600 IC = 1 A 400 TJ = 125C TJ = 25C IC = 2 A t c , CROSSOVER TIME (ns) 2000 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C IC = 2 A 1500 t fi , FALL TIME (ns) 1000 200 0 2 4 6 8 10 12 14 hFE, FORCED GAIN 16 18 20 500 0 2 8 hFE, FORCED GAIN 14 IC = 1 A 20 Figure 21. Inductive Fall Time Figure 22. Inductive Crossover Time 4 t fr , FORWARD RECOVERY TIME (ns) IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 420 dI/dt = 10 A/s TC = 25C 380 IB = 50 mA t, TIME ( s) 3 2 IB = 100 mA IB = 200 mA IB = 500 mA I = 1 A B 1 0.5 1 1.5 2 2.5 3 IC, COLLECTOR CURRENT (AMPS) 340 3.5 4 300 0 1.5 0.5 1 IF, FORWARD CURRENT (AMP) 2 Figure 23. Inductive Storage Time, tsi Figure 24. Forward Recovery Time, TFR Motorola Bipolar Power Transistor Device Data 7 MJE18004D2 TYPICAL SWITCHING CHARACTERISTICS 10 VCE dyn 1 s dyn 3 s VOLTS 0V 9 8 7 6 5 4 90% IB 1 s IB 3 s TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp 10% Vclamp tc 10% IC tsi IC 90% IC tfi Figure 25. Dynamic Saturation Voltage Measurements Figure 26. Inductive Switching Measurements VFRM VFR (1.1 VF unless otherwise specified) VF tfr 0.1 VF 0 VF IF 10% IF 0 2 4 6 8 10 Figure 27. tfr Measurements 8 Motorola Bipolar Power Transistor Device Data MJE18004D2 TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA Iout IB IB2 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired Ib1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired Ib1 RB1 VCE IB1 IC PEAK 150 3W 1 F -Voff TYPICAL CHARACTERISTICS 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 1 s 1 ms 5 ms 1 DC 10 s EXTENDED SOA 6 5 4 3 2 1 0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 200 600 400 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0V -1.5 V -5 V TC 125C GAIN 5 LC = 2 mH 10 0.1 0.01 Figure 28. Forward Bias Safe Operating Area Figure 29. Reverse Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 9 MJE18004D2 TYPICAL CHARACTERISTICS 1.0 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 0.4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 30. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on T C = 25C; T J (pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse biased. The safe level is specified as a reverse- biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.1 1 t, TIME (ms) 10 t1 P(pk) RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000 0.01 0.01 Figure 31. Typical Thermal Response (ZJC(t)) for MJE18004D2 10 Motorola Bipolar Power Transistor Device Data MJE18004D2 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 11 MJE18004D2 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 12 *MJE18004D2/D* Motorola Bipolar Power Transistor Device Data MJE18004D2/D |
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